IGBT vs. SCR Rectifier

Author:platingeqpt 2024-11-08 16:52:40 11 0 0

Why use an IGBT rectifier instead of a SCR rectifier?

Compared with SCR rectifiers, IGBT rectifiers can run continuously for 24 hours.

IGBT rectifier consumes at least 15% less power than SCR rectifier

The IGBT rectifier is less affected by power fluctuations, 100% output, no additional capacity is required.

The IGBT rectifier adopts AC-DC-AC-DC topology, 3-phase AC is first converted to DC, in which there are capacitors for energy charging and discharging, which will suppress power fluctuations.

The SCR rectifier does not have the function of energy buffering, it is directly affected by the power fluctuation of the grid.

The time required for IGBT rectifier plating is shortened by 40%.

Low grid pollution, power factor>0.93

Lower cost

 

Feature

IGBT Rectifier

SCR Rectifier

Reliability

High

High

Power Consumption

At least 15% lower

-

Impact of Power Fluctuations

Smaller

Larger

100% Output, No Extra Capacity

Yes

No

Plating Time Reduction

Shorter (40% reduction)

-

Size and Weight

Smaller

Larger

Grid Pollution

Low (Power Factor > 0.93)

Higher

Cost

Lower

-

 

Overall, an IGBT rectifier works by using an IGBT as a controlled switch to rectify the AC input, regulate the output voltage, and enable bidirectional power flow.

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SCR based rectifier vs IGBT based rectifier

IGBTs are faster, and controllable at any time.

SCRs are slower, and can only be turned on voluntarily*, then remain latched on until current flow stops.

*There are gate-turn-off (GTO) types, which can be switched off with difficulty.

Both have comparable conduction losses.

SCRs may incur additional switching losses (e.g. forced commutation in inverters), and generally require larger support components (large value reactors and capacitors).

SCRs are available in extremely large ratings (many megawatts each); IGBTs are approaching them, but as I understand it, still inferior for the highest power applications.

There are also SiC MOSFETs and IGBTs available these days, which may be applicable in low and medium voltage applications (up to 10kV per device, perhaps more). Data about these is scarce so I don't know much about them. I assume they are more expensive and not available in such large ratings (i.e. 100s A), but the potential for higher efficiency (with MOSFETs) and faster switching (both types) has some promise.

(Just checked; apparently some SiC SCRs are available too, with greatly improved speed. Fascinating!)

There are few applications for SCRs at less than high-power industrial levels, and those are mainly for mains (on/off) control. Controllable rectifiers are probably decreasingly popular due to poor power factor and the large reactors and transformers required.

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Briefly of IGBT rectifier:

Through comprehensive analysis of the equivalent circuit to simplify explain cumbersome IGBT working principle and the role, and noted IGBT characteristics. It can be said, IGBT is a switching device either on or off, it combine both advantages of of MOSFET’s high input impedance and GTR’s low conduction voltage drop.

IGBT Rectifier constitution:

IGBT (insulated gate bipolar transistor), constituted of BJT (bipolar transistor) and MOS (insulated gate field effect transistor) composite full-controlled type voltage-driven power semiconductor devices, with high input impedance MOSFET and GTR’s low on-state voltage drop down. GTR saturation pressure drop, carrier high current density, but the drive current is large; MOSFET drive power is very small, fast switching speed, but large conducting voltage drop, the carrier density is small.
IGBT combines advantages of these two devices, the driving power is small and the saturation while voltage drop low. Very suitable for the DC voltage of 600V and above, variable flow systems such as AC motor, inverter, switching power supply, lighting circuits, traction drive and other fields.
Insulated gate bipolar transistor (IGBT) is the youngest one of high voltage switch family. A 15V high-impedance voltage source facilitate control current flow through the device which can achieve a lower control power to control the high current.

IGBT rectifier principle and action:

Simply to say, IGBT is a switch, either on or off, how to control its on or off, by the gate-source voltage, when the gate-source plus +12V (greater than 6V, generally take 12V to 15V) the IGBT conducting, gate source voltage is not applied or is applied negative pressure, IGBT turn-off, a negative pressure purpose is reliably shut off. No amplified voltage IGBT function, turn on can be seen as the wire, other as open circuit when disconnected.

IGBT rectifier conduct/insulation electricity:

IGBT has three terminals, namely, G, D, S, G and S ends apply voltage, the internal electrons transfer (characteristic of the semiconductor material, which is the reason why use semiconductor material as power electronic switch), originally correspondence of positive and negative ions, semiconductor material in neutral, but applied voltage, electrons under the influence of voltage, accumulation to one side, forming a layer of conductive channel, because the electron is electrically conductive, becomes a conductor . If remove applied both ends voltage of GS, this layer of conductive channel disappear, do not conduct electricity, and become insulators. This is pass of IGBT rectifier.

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